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STD7LN80K5 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STD7LN80K5 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 16 page STD7LN80K5 Electrical ratings DocID028774 Rev 1 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID (1) Drain current (continuous) at TC = 25 °C 5 A ID (1) Drain current (continuous) at TC = 100 °C 3.4 A ID (2) Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25 °C 85 W dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature - 55 to 150 °C Tj Operating junction temperature Notes: (1) Limited by maximum junction temperature. (2) Pulse width limited by safe operating area. (3) ISD ≤ 5 A, di/dt ≤ 100 A/µs; VDS peak < V(BR)DSS, VDD=640 V (4) VDS ≤ 640 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.47 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W Notes: (1) When mounted on FR-4 board of 1 inch², 2 oz Cu Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 1.5 A EAS (Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 200 mJ |
Podobny numer części - STD7LN80K5 |
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