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STP150NF04 Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STP150NF04
Szczegółowy opis  N-channel 40 V, 0.005typ., 80 A STripFET?줚I Power MOSFET in a TO-220 package
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Strona internetowa  http://www.st.com
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Electrical characteristics
STP150NF04
4/12
Doc ID 14848 Rev 3
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS = 0
40
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 40 V
VDS = 40 V @ Tj= 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 40 A
0.005
0.007
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID = 15 A
-
90
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f =1 MHz
VGS=0
-
3650
1145
400
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=32 V, ID=80 A,
VGS=10 V
(see Figure 14)
-
118
20
45
150
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 25 V, ID = 40 A
RG =4.7 Ω, VGS = 10 V
(see Figure 13)
-
15
150
70
45
-
ns
ns
ns
ns


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