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STPSC12H065C Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STPSC12H065C Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 8 page DocID024809 Rev 3 3/8 STPSC12H065C Characteristics 8 Table 5. Dynamic electrical characteristics (per diode) Symbol Parameter Test conditions Typ. Unit Qcj (1) Total capacitive charge VR = 400 V 18 nC Cj Total capacitance VR = 0 V, Tc = 25 °C, F = 1 MHz 300 pF VR = 400 V, Tc = 25 °C, F = 1 MHz 30 1. Most accurate value for the capacitive charge: Figure 1. Forward voltage drop versus forward current (typical values, low level, per diode) Figure 2. Forward voltage drop versus forward current (typical values, high level, per diode) Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 4. Peak forward current versus case temperature |
Podobny numer części - STPSC12H065C |
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Podobny opis - STPSC12H065C |
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