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STY100NM60N Arkusz danych(PDF) 7 Page - STMicroelectronics

Numer części STY100NM60N
Szczegółowy opis  Low input capacitance and gate charge
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY100NM60N Arkusz danych(HTML) 7 Page - STMicroelectronics

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STY100NM60N
Electrical characteristics
Doc ID 022225 Rev 2
7/13
Figure 8.
Capacitance variations
Figure 9.
Normalized on-resistance vs
temperature
Figure 10.
Normalized gate threshold voltage
vs temperature
Figure 11.
Normalized BVDSS vs temperature
Figure 12.
Source-drain diode forward
characteristics
Figure 13.
Output capacitance stored energy
C
1000
10
0.1
1
VDS(V)
(pF)
10
Ciss
Coss
Crss
100
100
10000
AM15385v1
RDS(on)
1.5
1.3
0.7
0.5
-50
0
TJ(°C)
(norm)
-25
25
50
0.9
1.1
ID= 49 A
75
100
1.7
1.9
2.1
AM15387v1
TJ(°C)
ID =250 µA
1.05
0.90
0.75
0.70
-50
0
-25
25
50
0.80
0.85
VGS(th)
(norm)
75
100 125
0.95
1.00
AM15393v1
VDS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
ID=1mA
1.08
1.10
AM09028v1
VSD
0
20
ISD(A)
(V)
60
40
0
0.2
0.4
0.6
TJ=-50°C
TJ=150°C
TJ=25°C
0.8
80
1
1.2
1.4
AM15391v1
Eoss
30
20
10
0
0
100
VDS(V)
(µJ)
400
40
200
300
50
60
500
600
AM15390v1


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