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ACE1512E Arkusz danych(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE1512E Arkusz danych(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 6 page ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.1 2 Ordering information ACE1512EBMS + H Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA 20 V Zero gate voltage drain current IDSS VDS=20V, VGS=0V 1 µA Gate threshold voltage VGS(th) VGS=VDS, IDS=250µA 0.4 0.52 1 V Gate leakage current IGSS VGS=±8V, VDS=0V 10 µA Drain-source on-state resistance RDS(ON) VGS=4.5V, ID=6.5A 16.2 21 mΩ VGS=2.5V, ID=5.5A 19.4 25 VGS=1.8V, ID=5A 24.4 33 Forward transconductance gFS VDS=5V, ID=6.5A 13 S Diode forward voltage VSD ISD=2.5A, VGS=0V 0.67 1.6 V Maximum body-diode continuous current IS 2.5 A Switching Total gate charge Qg VGS=4.5V, VDS=10V, ID=8A 13.8 17.94 nC Gate-source charge Qgs 4.1 5.33 Gate-drain charge Qgd 5.6 7.28 Turn-on delay time td(on) VGS=5V, VDS=10V RL=1.5 Ω, R GEN=3 Ω 6.2 12.4 ns Turn-on rise time tr 12.7 25.4 Turn-off delay time td(off) 51.7 103.4 Turn-off fall time tf 16 32 Dynamic Input capacitance Ciss VGS=0V, VDS=10V, f=1MHz 1160 pF Output capacitance Coss 104 Reverse transfer capacitance Crss 29 Note : A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. BMS : TSOT-23-3 Pb - free Halogen - free |
Podobny numer części - ACE1512E |
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Podobny opis - ACE1512E |
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