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Z00607DA1BA2 Arkusz danych(PDF) 3 Page - Kersemi Electronic Co., Ltd.

Numer części Z00607DA1BA2
Szczegółowy opis  SENSITIVE GATE TRIACS
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Producent  KERSEMI [Kersemi Electronic Co., Ltd.]
Strona internetowa  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

Z00607DA1BA2 Arkusz danych(HTML) 3 Page - Kersemi Electronic Co., Ltd.

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12
5
10
0.1
1.0
10.0
50.0
ITSM(A),I²t(A²s)
Tj initial=25°C
ITSM
I²t
tp(ms)
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2t.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10.0
ITM(A)
Tj=25°C
Tj max.:
Vto= 0.95 V
Rd= 420 m
Tj=Tj max.
VTM(V)
Fig 8: On-state characteristics (maximum values).
-40
-20
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH[Tj] / IGT,IH[Tj=25°C]
IGT
IH
Tj(°C)
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
ITSM(A)
Tj initial=25°C
F=50Hz
Number of cycles
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
0
1020
3040
5060
7080
90 100 110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IT(RMS)(A)
α=180°
Rth(j-a)=Rth(j-l)
Rth(j-a)=150°C/W
Tamb(°C)
Fig 3: RMS on-state current versus ambient tem-
perature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
K=[Zth(j-a)/Rth(j-a)]
tp(s)
Fig 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Z00607DA / Z00607MA
3/4
www.kersemi.com


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