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SN74VMEH22501A-EP Arkusz danych(PDF) 6 Page - Texas Instruments |
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SN74VMEH22501A-EP Arkusz danych(HTML) 6 Page - Texas Instruments |
6 / 38 page SN74VMEH22501A-EP SCES625A – FEBRUARY 2005 – REVISED NOVEMBER 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC, Supply voltage –0.5 4.6 V BIAS VCC VI Input voltage(2) –0.5 7 V VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 7 V 3A port or Y output –0.5 VCC + 0.5 VO Voltage applied to any output in the high or low state(2) V B port –0.5 4.6 3A port or Y output 50 IO Output current in the low state mA B port 100 3A port or Y output –50 IO Output current in the high state mA B port –100 IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 or VO > VCC, B port –50 mA TJ Junction temperature –55 150 °C Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6 Submit Documentation Feedback Copyright © 2005–2015, Texas Instruments Incorporated Product Folder Links: SN74VMEH22501A-EP |
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