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SPP02N60C3 Arkusz danych(PDF) 1 Page - Infineon Technologies AG |
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SPP02N60C3 Arkusz danych(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 2003-10-02 Page 1 SPP02N60C3 SPB02N60C3 Final data Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-1 P-TO263-3-2 Type Package Ordering Code SPP02N60C3 P-TO220-3-1 Q67040-S4392 SPB02N60C3 P-TO263-3-2 Q67040-S4393 Marking 02N60C3 02N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 1.8 1.1 A Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V EAS 50 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 1.8 A, VDD = 50 V EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 °C |
Podobny numer części - SPP02N60C3 |
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Podobny opis - SPP02N60C3 |
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