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SPI20N65C3 Arkusz danych(PDF) 3 Page - Infineon Technologies AG |
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SPI20N65C3 Arkusz danych(HTML) 3 Page - Infineon Technologies AG |
3 / 14 page 2003-0 8-15 Page 3 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=13.1A - 17.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f =1MHz - 2400 - pF Output capacitance Coss - 780 - Reverse transfer capacitance Crss - 50 - Effective output capacitance,6) energy related Co(er) VGS=0V, VDS=0V to 480V - 83 - Effective output capacitance,7) time related Co(tr) - 160 - Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6Ω, Tj=125 - 10 - ns Rise time tr VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6Ω - 5 - Turn-off delay time td(off) - 67 100 Fall time tf - 4.5 12 Gate Charge Characteristics Gate to source charge Qgs VDD=480V, ID=20.7A - 11 - nC Gate to drain charge Qgd - 33 - Gate charge total Qg VDD=480V, ID=20.7A, VGS=0 to 10V - 87 114 Gate plateau voltage V(plateau) VDD=480V, ID=20.7A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5HTRB @ 1000h, 600V, Tjmax resp. accelerated HTRB @ 168h, 600V, Tj= 175°C according to JEDEC A108, MIL-STD 750/1038-1040, 1042 6C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 7C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. |
Podobny numer części - SPI20N65C3 |
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Podobny opis - SPI20N65C3 |
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