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FSB50325AS Arkusz danych(PDF) 4 Page - Fairchild Semiconductor

Numer części FSB50325AS
Szczegółowy opis  Motion SPMR 5 Series
Download  12 Pages
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FSB50325AS Arkusz danych(HTML) 4 Page - Fairchild Semiconductor

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©2012 Fairchild Semiconductor Corporation
4
www.fairchildsemi.com
FSB50325A, FSB50325AT, FSB50325AS Rev. C5
Electrical Characteristics (T
J = 25°C, VCC = VBS = 15 V unless otherwise specified.)
Inverter Part (each MOSFET unless otherwise specified.)
Control Part (each HVIC unless otherwise specified.)
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
2nd Notes:
1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM
® 5 product. V
PN should be sufficiently less than this
value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case.
2. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test
circuit that is same as the switching test circuit.
4. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically.
5. Built-in bootstrap diode includes around 15 Ω resistance characteristic. Please refer to Figure 2.
Symbol
Parameter
Conditions
Min
Typ Max
Unit
BVDSS
Drain - Source
Breakdown Voltage
VIN = 0 V, ID = 1 mA (2nd Note 1)
250
-
-
V
IDSS
Zero Gate Voltage
Drain Current
VIN = 0 V, VDS = 250 V
-
-
1
mA
RDS(on)
Static Drain - Source
Turn-On Resistance
VCC = VBS = 15 V, VIN = 5 V, ID = 1.0 A
-
1.1
1.7
VSD
Drain - Source Diode
Forward Voltage
VCC = VBS = 15V, VIN = 0 V, ID = -1.0 A
-
-
1.2
V
tON
Switching Times
VPN = 150 V, VCC = VBS = 15 V, ID = 1.0 A
VIN = 0 V  5 V, Inductive Load L = 3 mH
High- and Low-Side MOSFET Switching
(2nd Note 2)
-
810
-
ns
tOFF
-
600
-
ns
trr
-
140
-
ns
EON
-40-
J
EOFF
-10-
J
RBSOA
Reverse Bias Safe Oper-
ating Area
VPN = 200 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS,
TJ = 150°C
High- and Low-Side MOSFET Switching (2nd Note 3)
Full Square
Symbol
Parameter
Conditions
Min
Typ Max
Unit
IQCC
Quiescent VCC Current
VCC = 15 V,
VIN = 0 V
Applied Between VCC and COM
-
-
200
A
IQBS
Quiescent VBS Current
VBS = 15 V,
VIN = 0 V
Applied Between VB(U) - U,
VB(V) - V, VB(W) - W
-
-
100
A
UVCCD
Low-Side Under-Voltage
Protection (Figure 8)
VCC Under-Voltage Protection Detection Level
7.4
8.0
9.4
V
UVCCR
VCC Under-Voltage Protection Reset Level
8.0
8.9
9.8
V
UVBSD
High-Side Under-Voltage
Protection (Figure 9)
VBS Under-Voltage Protection Detection Level
7.4
8.0
9.4
V
UVBSR
VBS Under-Voltage Protection Reset Level
8.0
8.9
9.8
V
VTS
HVIC Temperature Sens-
ing Voltage Output
VCC = 15 V, THVIC = 25°C (2nd Note 4)
600
790
980
mV
VIH
ON Threshold Voltage
Logic HIGH Level
Applied between IN and COM
--
2.9
V
VIL
OFF Threshold Voltage
Logic LOW Level
0.8
-
-
V
Symbol
Parameter
Conditions
Min
Typ Max
Unit
VFB
Forward Voltage
IF = 0.1 A, TC = 25°C (2nd Note 5)
-
2.5
-
V
trrB
Reverse Recovery Time
IF = 0.1 A, TC = 25°C
-
80
-
ns


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