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TLP715 Arkusz danych(PDF) 8 Page - Toshiba Semiconductor |
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TLP715 Arkusz danych(HTML) 8 Page - Toshiba Semiconductor |
8 / 9 page TLP715 2014-09-01 8 Figure 1 Partial discharge measurement procedure according to EN60747 Destructive test for qualification and sampling tests. Method A (for type and sampling tests, destructive tests) t1, t2 t3, t4 tp(Measuring time for partial discharge) tb tini V VINITIAL(8kV) Vpr(1335V for TLPxxx) (1710V for TLPxxxF) VIORM(890V for TLPxxx) (1140V for TLPxxxF) 0 t1 tini t3 t2 tP tb t4 t = 1 to 10 s = 1 s = 10 s = 12 s = 60 s tP Vpr(1670V for TLPxxx) (2140V for TLPxxxF) VIORM(890V for TLPxxx) (1140V for TLPxxxF) V t t3 t4 tb Figure 2 Partial discharge measurement procedure according to EN60747 Non-destructive test for100% inspection. Method B (for sample test,non- destructive test) t3, t4 tp(Measuring time for partial discharge) tb = 0.1 s = 1 s = 1.2 s 500 400 300 200 100 0 0 25 50 75 100 125 150 175 1000 800 600 400 200 0 Ta (°C) ← Isi Psi → Isi (mA) Psi (mW) Figure 3 Dependency of maximum safety ratings on ambient temperature (for photodetector failure) |
Podobny numer części - TLP715_14 |
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Podobny opis - TLP715_14 |
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