Doubler

14.625-15.0/29.25-30 GHz

Rev. V3

XX1010-QT

1

1

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Features

 Integrated Gain, Doubler and Driver Stages

 +4.5 V Single Positive Bias

 Integrated Bypassing Capacitor

 +20 dBm Output Saturated Power

 30 dBc Fundamental Suppression

 On-Chip ESD Protection

 100% RF, DC and Output Power Testing

 Lead-Free 3 mm 16-Lead QFN Package

 RoHS* Compliant and 260°C Reflow Compatible

Description

The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz

GaAs MMIC doubler that integrates a gain stage,

passive doubler and driver amplifier onto a single

device. This device has a self-biased architecture

requiring a single positive supply (+4.5V) only and

integrated on-chip bypassing and DC blocking

capacitors eliminating the need for any external

components.

This device uses InGaAs pHEMT device technology,

and is based upon electron beam lithography to

ensure high repeatability and uniformity.

The XX1010-QT has integrated ESD structures for

protection and comes in a low cost 3 mm QFN

package.

The device is well suited for millimeter wave

Point-to-Point Radio, LMDS, SATCOM and VSAT

applications.

Ordering Information

Part Number

Package

XX1010-QT-0G00

Bulk Quantity

XX1010-QT-0G0T

1000 Piece Reel

XX1010-QT-EV1

Evaluation Board

Functional Block Diagram

Pin No.

Function

1,4,5,6,7,8

No Connection

2,11

Ground

3

RF Input

9,12,14,15,16

No Connection

10

RF Output

13

Vd

N/C

GND

X2

12

11

10

9

1

2

3

4

5

6

7

8

13

14

15

16

N/C

N/C

N/C N/C

N/C

N/C

N/C N/C

Vd

GND

N/C

N/C

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground.