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2SA1001 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1001 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1001 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -130 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -130 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -130V; IE= 0 -50 μ A IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -50 μ A hFE DC Current Gain IC= -0.5A ; VCE= -5V 50 200 fT Current-Gain —Bandwidth Product IC= -1A ; VCE= -10V 40 MHz |
Podobny numer części - 2SA1001 |
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Podobny opis - 2SA1001 |
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