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BYZ35K47 Arkusz danych(PDF) 1 Page - Diotec Semiconductor |
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BYZ35K47 Arkusz danych(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1 07.01.2003 BYZ 35A22 ... BYZ 35A47 BYZ 35K22 ... BYZ 35K47 Silicon Protectifiers Silizium Schutzgleichrichter with TVS characteristics mit Begrenzereigenschaften High-temperature diodes Hochtemperaturdioden Nominal current – Nennstrom 35 A Nominal breakdown voltage 19.8 ... 51.7 V Nominale Abbruch-Spannung Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx. – Gewicht ca. 10 g Casting compound has UL classification 94V-0 Vergußmasse UL94V-0 klassifiziert Dimensions / Maße in mm Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Anode Cathode Breakdown voltage Abbruch-Spannung I T = 100 mA V BRmin [V] VBRmax Reverse voltage Sperrspannung I R = 5 :A V R [V] Max. clamping voltage Max. Begrenzerspanng. at / bei I PP, tp = 1m s V C [V] I PP [A] BYZ 35A22 BYZ 35K22 19.8 24.2 > 17.8 31,9 161 BYZ 35A27 BYZ 35K27 24.3 29.7 > 21.8 39,1 128 BYZ 35A33 BYZ 35K33 29.7 36.3 > 26.8 47,7 106 BYZ 35A39 BYZ 35K39 35.1 42.9 > 31.6 56,4 89 BYZ 35A47 BYZ 35K47 42.3 51.7 > 38.1 67,8 75 Max. average forward rectified current, R-load T C = 150 /CI FAV 35 A Dauergrenzstrom in Einwegschaltung mit R-Last Peak forward surge current, 50 / 60 Hz half sine-wave T A = 25 /CI FSM 360 / 400 A Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing, t <10 ms T A = 25 /Ci2t 660 A2s Grenzlastintegral, t <10 ms Forward voltage T j = 25 /CI F = 35 A V F < 1.1 V Durchlaßspannung Operating junction temperature – Sperrschichttemperatur T j – 50…+215 /C Storage temperature – Lagerungstemperatur T S – 50…+215 /C Ø ±01 13 1.3 Ø ±0.1 11 Ø 12.75 |
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