MTB017B03Q8-0-T3-G datasheet(2/9 Pages) CYSTEKEC

Numer części	MTB017B03Q8-0-T3-G

Szczegółowy opis	Dual P-Channel Enhancement Mode Power MOSFET

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Producent	CYSTEKEC [Cystech Electonics Corp.]

Strona internetowa	http://www.cystekec.com

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2 / 9 page

CYStech Electronics Corp.

Spec. No. : C107Q8

Issued Date : 2016.03.01

Revised Date :

Page No. : 2/9

MTB017B03Q8

CYStek Product Specification

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±25

V

Continuous Drain Current @ VGS=-10V, TA=25

°C

-8.8

Continuous Drain Current @ VGS=-10V, TA=100

°C

ID

-6.2

Pulsed Drain Current

(Note 1)

IDM

-35

Avalanche Current

IAS

-12

A

Avalanche Energy @ L=1mH, ID=-8A, VD=-15V

EAS

32

Repetitive Avalanche Energy @ L=0.05mH

(Note 2)

EAR

8

mJ

TA=25°C

(Note 3)

2.4

Power Dissipation

TA=100°C

PD

1.2

W

Operating Junction and Storage Temperature Range

Tj ; Tstg

-55~+175

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

RθJC

25

Thermal Resistance, Junction-to-ambient, max

RθJA

62.5 *3

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

3. Surface mounted on 1 in² copper pad of FR-4 board, 125

°C/W when mounted on minimum copper pad

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