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MTB020N06KH8 Arkusz danych(PDF) 1 Page - Cystech Electonics Corp. |
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MTB020N06KH8 Arkusz danych(HTML) 1 Page - Cystech Electonics Corp. |
1 / 10 page CYStech Electronics Corp. Spec. No. : C103H8 Issued Date : 2016.04.20 Revised Date : Page No. : 1/ 10 MTB020N06KH8 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTB020N06KH8 BVDSS 60V 42A ID@VGS=10V, TC=25°C 7.8A ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8A 12.2mΩ(typ) Features RDS(ON)@VGS=4.5V, ID=6A 15.6mΩ(typ) • Low On Resistance RDS(ON)@VGS=4V, ID=4A • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free package Symbol Outline MTB020N06KH8 DFN5×6 17.6mΩ(typ) G:Gate D:Drain S:Source Pin 1 Ordering Information Device Package Shipping MTB020N06KH8-0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name |
Podobny numer części - MTB020N06KH8 |
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Podobny opis - MTB020N06KH8 |
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