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2SC4927 Arkusz danych(PDF) 3 Page - Hitachi Semiconductor

Numer części 2SC4927
Szczegółowy opis  Silicon NPN Triple Diffused
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Producent  HITACHI [Hitachi Semiconductor]
Strona internetowa  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4927 Arkusz danych(HTML) 3 Page - Hitachi Semiconductor

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2SC4927
3
80
60
40
20
0
50
100
150
200
Case Temperature
Tc (
°C)
Maximum Collector Power Dissipation Curve
20
16
12
8
4
400
800
1200
1600
2000
Collector to Emitter Voltage
V
(V)
Area of Safe Operation
CE
0
(100 V, 18 A)
(800 V, 4 A)
0.5 mA
f = 15.75 kHz
Ta = 25
°C
For picture tube arcing
10
5
05
10
Collector to Emitter Voltage
V
(V)
Typical Output Characteristics
CE
I
= 0
B
Tc = 25
°C
0.2 A
0.6 A
0.4 A
1.4 A
0.8 A
1.0 A
1.2 A
1.6 A
1.8 A
2.0 A


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Podobny opis - 2SC4927

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32Kb / 5P		    Silicon NPN Triple Diffused
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35Kb / 6P		    Silicon NPN Triple Diffused
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32Kb / 6P		    Silicon NPN Triple Diffused
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35Kb / 6P		    Silicon NPN Triple Diffused
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30Kb / 6P		    Silicon NPN Triple Diffused
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39Kb / 8P		    Silicon NPN Triple Diffused
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20Kb / 4P		    Silicon NPN Triple Diffused
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45Kb / 7P		    Silicon NPN Triple Diffused
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160Kb / 5P		    Silicon NPN Triple Diffused
2SD1126 RENESAS-2SD1126 Datasheet
147Kb / 7P		    Silicon NPN Triple Diffused
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