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2SK1022 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1022 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1022 ·ELECTRICAL CHARACTERISTICS (T C=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 800 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 7.3 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 500 uA VSD Forward On-Voltage IS=2.5A; VGS=0 1.0 1.50 V tr Rise time VGS=10V;ID=2.5A; RL=25Ω 60 90 ns ton Turn-on time 85 128 ns tf Fall time 60 90 ns toff Turn-off time 160 240 ns PDF pdfFactory Pro www.fineprint.cn |
Podobny numer części - 2SK1022 |
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Podobny opis - 2SK1022 |
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