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2N1131 Arkusz danych(PDF) 1 Page - Microsemi Corporation |
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2N1131 Arkusz danych(HTML) 1 Page - Microsemi Corporation |
1 / 3 page TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX MAXIMUM RATINGS Ratings Symbol All Units Units Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25 0C(1) @ TC = +25 0C(2) PT 0.6 2.0 W W Operating & Storage Temperature Range Top, Tj -65 to +200 °C 1) Derate linearly 3.4 mW/ 0C for TA ≥ +250C 2) Derate linearly 11.4 mW/ 0C for TC ≥ +250C TO-39* 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 25 0C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc V(BR)CEO 40 Vdc Collector-Base Breakdown Voltage IC = 10 µAdc V(BR)CBO 50 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc IEBO 100 µAdc Collector-Emitter Cutoff Current VCE = 50 Vdc, RBE ≤ 10 ohms ICER 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 30 Vdc ICBO 10 1.0 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 |
Podobny numer części - 2N1131 |
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Podobny opis - 2N1131 |
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