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BDY56 Arkusz danych(PDF) 2 Page - List of Unclassifed Manufacturers |
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BDY56 Arkusz danych(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 3 page COMSET SEMICONDUCTORS 2/3 BDY55 – BDY56 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDY55 60 - - VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=200 mA, IB=0 BDY56 120 - - V VCE=30 V BDY55 -- 0.7 ICEO Collector-Emitter Cutoff Current VCE=60 V BDY56 -- 0.5 mA BDY55 -- 5.0 IEBO Emitter-Base Cutoff Current VEB=7 V BDY56 -- 3.0 mA VCE=100 V VBE=-1.5 V -- 5.0 VCE=100 V VBE=-1.5 V TCASE=150°C BDY55 -- 30 VCE=150 V VBE=-1.5 V -- 3.0 ICEX Collector-Emitter Cutoff Current VCE=150 V VBE=-1.5 V TCASE=150°C BDY56 -- 30 mA IC=4.0 A, IB=0.4 A BDY55 BDY56 -- 1.1 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=3.3 A BDY55 BDY56 -- 2.5 V VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=4.0 V BDY55 BDY56 -- 1.8 V VCE=4 V, IC=4 A BDY55 BDY56 20 - 70 h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=10 A BDY55 BDY56 10 V fT Transition Frequency VCE=4.0 V, IC=1.0 A, f=10 MHz BDY55 BDY56 10 - - MHz |
Podobny numer części - BDY56 |
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Podobny opis - BDY56 |
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