BU1006A-E3, BU1008A-E3, BU1010A-E3

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Vishay General Semiconductor

Revision: 16-Aug-13

1

Document Number: 84800

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Enhanced isoCink+™ Bridge Rectifiers

* Tested to UL standard for safety electrically isolated

semiconductor devices. UL 1557 4th edition.



Dielectric tested to maximum case, storage and junction

temperature to 150 °C to withstand 1500 V.



Epoxy meets UL 94 V-0 flammability rating.

FEATURES

• UL recognition file number E309391 (QQQX2)

UL 1557 (see *)

• Thin single in-line package

• Available for BU-5S lead forming option

(part number with “5S” suffix, e.g. BU1006A5S)

• Superior thermal conductivity

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for

switching

power

supply,

home

appliances

and

white-goods applications.

MECHANICAL DATA

Case: BU

Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.

Recommended Torque: 5.7 cm-kg (5 inches-lbs)

Notes

Note

PRIMARY CHARACTERISTICS

Package

BU

10 A

600 V, 800 V, 1000 V

90 A

5 μA

0.94 V

150 °C

Diode variations

In-Line

+

~

~

-

-

~

~

+

isoCink+™

Case Style BU

+

~~

-

PARAMETER

SYMBOL

BU1006A

BU1008A

BU1010A

UNIT

Maximum repetitive peak reverse voltage

600

800

1000

V

Average rectified forward current (Fig. 1, 2)

10

A

3.0

Non-repetitive peak forward surge current



90

A

Operating junction and storage temperature range

- 55 to + 150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Maximum instantaneous forward



1.02

1.10

V

0.94

1.00

Maximum reverse current per diode

-5.0

μA

45

250

Typical junction capacitance per diode

4.0 V, 1 MHz

30

-

pF