BUZ12 datasheet(2/2 Pages) ISC

Numer części	BUZ12

Szczegółowy opis	High input impedance

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INCHANGE Semiconductor

isc Product Specification

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2

isc N-Channel Mosfet Transistor

BUZ12

·ELECTRICAL CHARACTERISTICS (T

C=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

50

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= 1mA

2.1

4

V

RDS(ON)

Drain-Source On-stage Resistance

VGS= 10V; ID= 32A

0.028

Ω

IGSS

Gate Source Leakage Current

VGS= 20V;VDS= 0

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 50V; VGS= 0

1

uA

VSD

Diode Forward Voltage

IF= 84A; VGS= 0

2.2

V

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