BUZ32 datasheet(1/2 Pages) ISC

Numer części	BUZ32

Szczegółowy opis	Nanosecond Switching Speeds

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

BUZ32

DESCRIPTION

·9.5A, 200V

·RDS(ON) = 0.400Ω

·SOA is Power Dissipation Limited

·Nanosecond Switching Speeds

·Linear Transfer Characteristics

·High Input Impedance

·Majority Carrier Device

·Related Literature

APPLICATIONS

·This is an N-Channel enhancement mode silicon gate power

field effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

200

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

9.5

A

Ptot

Total Dissipation@TC=25℃

75

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.67

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

75

℃/W

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