IXYT30N65C3H1HV datasheet(1/6 Pages) IXYS

Numer części	IXYT30N65C3H1HV

Szczegółowy opis	Optimized for 20-60kHz Switching

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Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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IXYT30N65C3H1HV

IXYH30N65C3H1

V

CES

= 650V

I

C110

= 30A

V

CE(sat) 



 2.7V

t

fi(typ)

= 24ns

DS100545A(7/14)

Extreme Light Punch Through

IGBT for 20-60kHz Switching

Features



Optimized for 20-60kHz Switching



Square RBSOA



High Voltage



Avalanche Rated



Short Circuit Capability



Anti-Parallel Sonic Diode

Advantages



High Power Density



Extremely Rugged



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts



High Frequency Power Inverters

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250

A, V

GE = 0V

650

V

GE(th)

I

C

= 250

A, V

CE = VGE

3.5

6.0

V

I

CES

V

CE = VCES, VGE = 0V

50

A

T

J = 150C

4 mA

I

GES

V

CE = 0V, VGE = 20V

100 nA

V

CE(sat)

I

C

= 30A, V

GE = 15V, Note 1

2.35

2.70

V

T

J = 150C

2.58

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 175°C

650

V

CGR

T

J

= 25°C to 175°C, R

GE = 1M

650

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C

= 25°C

60

A

I

C110

T

C

= 110°C

30

A

I

F110

T

C

= 110°C

29

A

I

CM

T

C

= 25°C, 1ms

118

A

I

A

T

C

= 25°C

10

A

E

AS

T

C

= 25°C

300

mJ

SSOA

V

GE = 15V, TVJ = 150°C, RG = 10

I

CM = 60

A

(RBSOA)

Clamped Inductive Load

V

CE  VCES

t

sc

V

GE = 15V, VCE = 360V, TJ = 150°C

8

μs

(SCSOA)

R

G

= 82

, Non Repetitive

P

C

T

C

= 25°C

270

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque

1.13/10

Nm/lb.in

Weight

TO-220

4

g

TO-247

6

g

XPTTM 650V IGBT

GenX3TM w/ Sonic

Diode

TO-268HV

G

C (Tab)

E

G = Gate

C

= Collector

E = Emitter

Tab = Collector

TO-247 AD

G

C

E

Tab

Preliminary Technical Information

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