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IRF121 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF121 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor IRF121 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 60 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A 0.3 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=60V; VGS=0 250 µA VSD Diode Forward Voltage IS=8A; VGS=0 2.5 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 450 600 pF Crss Reverse Transfer Capacitance 50 100 Coss Output Capacitance 200 400 tr Rise Time RGS=50Ω ID=4A; VDD=50V; RL=50Ω 35 70 ns td(on) Turn-on Delay Time 20 40 tf Fall Time 35 70 td(off) Turn-off Delay Time 50 100 PDF pdfFactory Pro www.fineprint.cn |
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