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IRF240 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części IRF240
Szczegółowy opis  Static Drain-Source On-Resistance
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF240 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRF240
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID=250µA
200
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID=250µA
2.0
4.0
V
RDS(ON)
Drain-Source On-stage Resistance
VGS=10V; ID=10A
0.18
Ω
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS=0
250
uA
VSD
Diode Forward Voltage
IS=18A; VGS=0
2.0
V
Ciss
Input Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
1400
1600
pF
Crss
Reverse Transfer Capacitance
85
300
Coss
Output Capacitance
310
750
tr
Rise Time
RGS=12.5Ω
ID=10A;
VDD=90V;
RL=50Ω
40
ns
td(on)
Turn-on Delay Time
20
tf
Fall Time
30
td(off)
Turn-off Delay Time
60
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