IRF244 datasheet(2/2 Pages) ISC

Numer części	IRF244

Szczegółowy opis	Static Drain-Source On-Resistance

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Producent	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

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2

isc N-Channel MOSFET Transistor

IRF244

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250µA

250

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2.0

4.0

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=8A

0.28

Ω

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=200V; VGS=0

250

µA

VSD

Diode Forward Voltage

IS=14A; VGS=0

1.8

V

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

1300

pF

Crss

Reverse Transfer Capacitance

69

Coss

Output Capacitance

320

tr

Rise Time

RGS=9.1Ω

ID=14A;

VDD=125V;

RL=8.9Ω

67

100

ns

td(on)

Turn-on Delay Time

16

24

tf

Fall Time

49

74

td(off)

Turn-off Delay Time

53

80

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IRF244 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

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