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IRF331 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF331 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor IRF331 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 350 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.0A 1.0 Ω IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 350V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 5.5A; VGS= 0 1.6 V Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz 700 pF Coss Output Capacitance 150 pF Crss Reverse Transfer Capacitance 40 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Td(on) Turn-on Delay Time VDD=200V,ID=5.5A RG=12Ω 11 17 ns Tr Rise Time 20 29 ns Td(off) Turn-off Delay Time 35 56 ns Tf Fall Time 15 24 ns PDF pdfFactory Pro www.fineprint.cn |
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