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IXXN200N60C3H1 Arkusz danych(PDF) 4 Page - IXYS Corporation |
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IXXN200N60C3H1 Arkusz danych(HTML) 4 Page - IXYS Corporation |
4 / 7 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXXN200N60C3H1 Fig. 7. Transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 160 180 200 IC - Amperes TJ = - 40ºC, 25ºC, 150ºC Fig. 10. Reverse-Bias Safe Operating Area 0 100 200 300 400 100 200 300 400 500 600 VCE - Volts TJ = 150ºC RG = 1Ω dv / dt < 10V / ns Fig. 8. Gate Charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 QG - NanoCoulombs VCE = 300V I C = 200A I G = 10mA Fig. 9. Capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VCE - Volts f = 1 MHz Cies Coes Cres Fig. 11. Forward-Bias Safe Operating Area 0.01 0.1 1 10 100 1000 1 10 100 1000 VDS - Volts TJ = 150ºC TC = 25ºC Single Pulse 1ms 10ms VCE(sat) Limit DC 100µs 25µs 100ms Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
Podobny numer części - IXXN200N60C3H1 |
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Podobny opis - IXXN200N60C3H1 |
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