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IXYP8N90C3D1 Arkusz danych(PDF) 5 Page - IXYS Corporation

Numer części IXYP8N90C3D1
Szczegółowy opis  900V XPTTM IGBT
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYP8N90C3D1 Arkusz danych(HTML) 5 Page - IXYS Corporation

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IXYA8N90C3D1
IXYP8N90C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.1
0.2
0.3
0.4
0.5
0.6
30
60
90
120
150
180
210
240
270
300
RG - Ohms
0
1
2
3
4
5
Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 450V
I C = 8A
I C = 16A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
30
60
90
120
150
180
210
240
270
300
RG - Ohms
0
40
80
120
160
200
240
280
t f i
td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 450V
I C = 16A
I C = 8A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.10
0.15
0.20
0.25
0.30
0.35
0.40
8
9
10
11
12
13
14
15
16
IC - Amperes
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Eoff
Eon - - - -
RG = 30ΩVGE = 15V
VCE = 450V
TJ = 125ºC
TJ = 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.10
0.15
0.20
0.25
0.30
0.35
0.40
25
50
75
100
125
TJ - Degrees Centigrade
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Eoff
Eon - - - -
RG = 30ΩVGE = 15V
VCE = 450V
IC = 8A
I C = 16A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
8
9
10
11
12
13
14
15
16
IC - Amperes
20
30
40
50
60
70
80
90
100
t f i
td(off) - - - -
RG = 30Ω, VGE = 15V
VCE = 450V
TJ = 125ºC
TJ = 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
40
60
80
100
120
140
160
180
200
220
25
50
75
100
125
TJ - Degrees Centigrade
20
30
40
50
60
70
80
90
100
110
t f i
td(off) - - - -
RG = 30Ω, VGE = 15V
VCE = 450V
I C = 8A
I C = 16A


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