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Zakładka z wyszukiwarką danych komponentów |
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FDD8880 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDD8880 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 11 page  ©2004 Fairchild Semiconductor Corporation September 2004 FDD8880 Rev. B1 FDD8880 N-Channel PowerTrench® MOSFET 30V, 58A, 9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features • rDS(ON) = 9mΩ, VGS = 10V, ID = 35A • rDS(ON) = 12mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 58 A Continuous (TC = 25 oC, V GS = 10V) (Note 1) Continuous (TC = 25 oC, V GS = 4.5V) (Note 1) 51 A Continuous (Tamb = 25 oC, V GS = 10 V, with R θJA = 52 oC/W) 13 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 2) 53 mJ PD Power dissipation 55 W Derate above 25oC 0.37 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252 2.73 oC/W RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 52 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDD8880 FDD8880 TO-252AA 13” 12mm 2500 units D G S G S D TO-252 D-PAK (TO-252) |
Podobny numer części - FDD8880 |
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Podobny opis - FDD8880 |
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