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IXYA20N65C3D1 Arkusz danych(PDF) 5 Page - IXYS Corporation

Numer części IXYA20N65C3D1
Szczegółowy opis  XPTTM 650V IGBT
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYA20N65C3D1 Arkusz danych(HTML) 5 Page - IXYS Corporation

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Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
30
40
50
60
70
80
90
100
RG - Ohms
0
1
2
3
4
5
6
7
Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 20A
I C = 40A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
20
25
30
35
40
45
50
55
20
30
40
50
60
70
80
90
100
RG - Ohms
60
90
120
150
180
210
240
270
t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
VCE = 400V
I C = 20A
I C = 40A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
15
20
25
30
35
40
IC - Amperes
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Eoff
Eon - - - -
RG = 20Ω , VGE = 15V
VCE = 400V
TJ = 150ºC
TJ = 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
TJ - Degrees Centigrade
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Eoff
Eon - - - -
RG = 20Ω , VGE = 15V
VCE = 400V
IC = 20A
I C = 40A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
20
25
30
35
40
45
50
55
10
15
20
25
30
35
40
IC - Amperes
60
70
80
90
100
110
120
130
t f i
td(off) - - - -
RG = 20Ω , VGE = 15V
VCE = 400V
TJ = 150ºC
TJ = 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
20
24
28
32
36
40
44
25
50
75
100
125
150
TJ - Degrees Centigrade
64
72
80
88
96
104
112
t f i
td(off) - - - -
RG = 20Ω , VGE = 15V
VCE = 400V
I C = 20A
I C = 40A
IXYA20N65C3D1
IXYP20N65C3D1


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