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MTB080C10Q8-0-T3-G Arkusz danych(PDF) 8 Page - Cystech Electonics Corp. |
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MTB080C10Q8-0-T3-G Arkusz danych(HTML) 8 Page - Cystech Electonics Corp. |
8 / 12 page CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 8/12 MTB080C10Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID=250 μA -ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -ID, Drain Current(A) -VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 2 4 6 8 1012 1416 18 20 Qg, Total Gate Charge(nC) ID=-1.9A VDS=-50V VDS=-20V VDS=-80V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) TA=25°C, Tj=150°C VGS=-10V, RθJA=78°C/W Single Pulse DC RDSON Limited 100 μs 1ms 10ms 100ms 1s Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C VGS=-10V RθJA=78°C/W |
Podobny numer części - MTB080C10Q8-0-T3-G |
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Podobny opis - MTB080C10Q8-0-T3-G |
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