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FDD6696 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDD6696
Szczegółowy opis  30V N-Channel PowerTrench MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD6696 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDD6696/FDU6696 Rev. D (W)
D
R
P
DS(ON)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
s
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
Single Pulse, VDD = 15 V, ID=13A
165
mJ
IAS
Drain-Source Avalanche Current
13
A
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
VGS = 0 V,
ID = 250
µA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
23
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
10
µA
IGSSF
Gate–Body Leakage
VGS =
± 16 V, VDS = 0 V
± 100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
1
2
3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 13 A
VGS = 4.5 V,
ID = 12 A
VGS = 10 V, ID = 13 A, TJ=125
°C
6.7
8.6
10.2
8.0
10.7
15.0
m
gFS
Forward Transconductance
VDS = 5 V,
ID = 13 A
51
S
Dynamic Characteristics
Ciss
Input Capacitance
1715
pF
Coss
Output Capacitance
410
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
180
pF
RG
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
1.3
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
13
23
ns
tr
Turn–On Rise Time
4
9
ns
td(off)
Turn–Off Delay Time
27
43
ns
tf
Turn–Off Fall Time
VDD = 15 V,
ID = 13 A,
VGS = 10 V,
RGEN = 6
17
31
ns
Qg
Total Gate Charge
17
24
nC
Qgs
Gate–Source Charge
5
nC
Qgd
Gate–Drain Charge
VDS = 15V,
ID = 13 A,
VGS = 5 V
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
13
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 13 A
(Note 2)
0.8
1.2
V
trr
Diode Reverse Recovery Time
27
nS
Qrr
Diode Reverse Recovery Charge
IF = 13 A,
diF/dt = 100 A/µs
15
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on
a 1in
2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package
current limitation is 21A


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