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FDD6696 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDD6696 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDD6696/FDU6696 Rev. D (W) D R P DS(ON) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit s Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=13A 165 mJ IAS Drain-Source Avalanche Current 13 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 23 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage VGS = ± 16 V, VDS = 0 V ± 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS = 10 V, ID = 13 A, TJ=125 °C 6.7 8.6 10.2 8.0 10.7 15.0 m Ω gFS Forward Transconductance VDS = 5 V, ID = 13 A 51 S Dynamic Characteristics Ciss Input Capacitance 1715 pF Coss Output Capacitance 410 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 180 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 13 23 ns tr Turn–On Rise Time 4 9 ns td(off) Turn–Off Delay Time 27 43 ns tf Turn–Off Fall Time VDD = 15 V, ID = 13 A, VGS = 10 V, RGEN = 6 Ω 17 31 ns Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge 5 nC Qgd Gate–Drain Charge VDS = 15V, ID = 13 A, VGS = 5 V 6 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 13 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 13 A (Note 2) 0.8 1.2 V trr Diode Reverse Recovery Time 27 nS Qrr Diode Reverse Recovery Charge IF = 13 A, diF/dt = 100 A/µs 15 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in 2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A |
Podobny numer części - FDD6696 |
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Podobny opis - FDD6696 |
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