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FQPF32N12V2 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FQPF32N12V2
Szczegółowy opis  120V N-Channel MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
QFET®
FQP32N12V2/FQPF32N12V2
120V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP32N12V2
FQPF32N12V2
Units
VDSS
Drain-Source Voltage
120
V
ID
Drain Current
- Continuous (TC = 25°C)
32
32 *
A
- Continuous (TC = 100°C)
23
23 *
A
IDM
Drain Current
- Pulsed
(Note 1)
128
128 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
439
mJ
IAR
Avalanche Current
(Note 1)
32
A
EAR
Repetitive Avalanche Energy
(Note 1)
15
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
150
50
W
- Derate above 25°C
1
0.33
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP32N12V2
FQPF32N12V2
Units
RθJC
Thermal Resistance, Junction-to-Case
1.0
3.0
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
40
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
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S
D
G
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D


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