Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

FDD8896 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDD8896
Szczegółowy opis  N-Channel PowerTrench MOSFET
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD8896 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

  FDD8896 Datasheet HTML 1Page - Fairchild Semiconductor FDD8896 Datasheet HTML 2Page - Fairchild Semiconductor FDD8896 Datasheet HTML 3Page - Fairchild Semiconductor FDD8896 Datasheet HTML 4Page - Fairchild Semiconductor FDD8896 Datasheet HTML 5Page - Fairchild Semiconductor FDD8896 Datasheet HTML 6Page - Fairchild Semiconductor FDD8896 Datasheet HTML 7Page - Fairchild Semiconductor FDD8896 Datasheet HTML 8Page - Fairchild Semiconductor FDD8896 Datasheet HTML 9Page - Fairchild Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
©2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
Electrical Characteristics T
C = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics (V
GS = 10V)
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 35A.
2: Starting TJ = 25°C, L = 0.43mH, I AS = 28A, VDD = 27V, VGS = 10V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, V GS = 0V
30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 24V
-
-
1
µA
VGS = 0V
TC = 150
oC
-
-
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, I D = 250µA
1.2
-
2.5
V
rDS(ON)
Drain to Source On Resistance
ID = 35A, V GS = 10V
-
0.0047 0.0057
ID = 35A, V GS = 4.5V
-
0.0057 0.0068
ID = 35A, V GS = 10V,
TJ = 175
oC
-
0.0075 0.0092
CISS
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1MHz
-
2525
-
pF
COSS
Output Capacitance
-
490
-
pF
CRSS
Reverse Transfer Capacitance
-
300
-
pF
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
-
2.1
-
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
V DD = 15V
ID = 35A
Ig = 1.0mA
-
46
60
nC
Qg(5)
Total Gate Charge at 5V
VGS = 0V to 5V
-
24
32
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
-
2.3
3.0
nC
Qgs
Gate to Source Gate Charge
-
6.9
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
4.6
-
nC
Qgd
Gate to Drain “Miller” Charge
-
9.8
-
nC
tON
Turn-On Time
VDD = 15V, I D = 35A
VGS = 10V, R GS = 6.2Ω
-
-
171
ns
td(ON)
Turn-On Delay Time
-
9
-
ns
tr
Rise Time
-
106
-
ns
td(OFF)
Turn-Off Delay Time
-
53
-
ns
tf
Fall Time
-
41
-
ns
tOFF
Turn-Off Time
-
-
143
ns
VSD
Source to Drain Diode Voltage
ISD = 35A
-
-
1.25
V
ISD = 15A
-
-
1.0
V
trr
Reverse Recovery Time
ISD = 35A, dISD /dt = 100A/µs
-
-
27
ns
QRR
Reverse Recovered Charge
ISD = 35A, dISD /dt = 100A/µs
-
-
12
nC


Podobny numer części - FDD8896

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Fairchild Semiconductor
FDD8896 FAIRCHILD-FDD8896 Datasheet
622Kb / 11P
   N-Channel PowerTrench짰 MOSFET
logo
VBsemi Electronics Co.,...
FDD8896 VBSEMI-FDD8896 Datasheet
1,011Kb / 7P
   N-Channel 30-V (D-S) MOSFET
logo
Inchange Semiconductor ...
FDD8896 ISC-FDD8896 Datasheet
353Kb / 2P
   isc N-Channel MOSFET Transistor
logo
Guangdong Youtai Semico...
FDD8896 UMW-FDD8896 Datasheet
651Kb / 7P
   30V N-Channel MOSFET
logo
ON Semiconductor
FDD8896-F085 ONSEMI-FDD8896-F085 Datasheet
553Kb / 12P
   N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ
September2017, Rev. 3
More results

Podobny opis - FDD8896

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Fairchild Semiconductor
FDD5680 FAIRCHILD-FDD5680 Datasheet
83Kb / 4P
   N-Channel, PowerTrench??MOSFET
FDD20AN06_F085 FAIRCHILD-FDD20AN06_F085 Datasheet
325Kb / 11P
   N-Channel PowerTrench MOSFET
logo
ON Semiconductor
FDD86369 ONSEMI-FDD86369 Datasheet
1Mb / 8P
   N-Channel PowerTrench MOSFET
January, 2017, Rev. 1.0
logo
Fairchild Semiconductor
FDMS86152 FAIRCHILD-FDMS86152 Datasheet
258Kb / 7P
   N-Channel PowerTrench MOSFET
logo
ON Semiconductor
FDWS86380_F085 ONSEMI-FDWS86380_F085 Datasheet
528Kb / 8P
   N-Channel PowerTrench MOSFET
December, 2016, Rev. 1.0
logo
Fairchild Semiconductor
FDP8876 FAIRCHILD-FDP8876 Datasheet
303Kb / 6P
   N-Channel PowerTrench MOSFET
FDB8441 FAIRCHILD-FDB8441 Datasheet
307Kb / 7P
   N-Channel PowerTrench MOSFET
FDD13AN06A0 FAIRCHILD-FDD13AN06A0 Datasheet
281Kb / 11P
   N-Channel PowerTrench MOSFET
FDP8874 FAIRCHILD-FDP8874 Datasheet
264Kb / 10P
   N-Channel PowerTrench MOSFET
FDS8984 FAIRCHILD-FDS8984_10 Datasheet
446Kb / 6P
   N-Channel PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com