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FDZ298N Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDZ298N Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDZ298N Rev B1 (W) Typical Characteristics 0 2 4 6 8 10 0 3 6 9 12 15 Qg, GATE CHARGE (nC) ID = 6.0A VDS = 5V 15V 10V 0 320 640 960 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms RDS(ON) LIMIT VGS = 4.5V SINGLE PULSE RθJA = 157 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 157°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RqJA(t) = r(t) * RqJA RqJA = 157 °C/W TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
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