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SZNUD3105DMT1G Arkusz danych(PDF) 2 Page - ON Semiconductor |
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SZNUD3105DMT1G Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 10 page NUD3105 http://onsemi.com 2 Figure 1. Internal Circuit Diagrams Drain (6) 1.0 k 300 k Gate (2) Source (1) Drain (3) 1.0 k 300 k Gate (5) Source (4) CASE 318F Drain (3) 1.0 k 300 k Gate (1) Source (2) CASE 318 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Rating Value Unit VDSS Drain to Source Voltage − Continuous 6.0 Vdc VGS Gate to Source Voltage – Continuous 6.0 Vdc ID Drain Current – Continuous 500 mA Ez Single Pulse Drain−to−Source Avalanche Energy ( TJinitial = 25°C) (Note 2) 50 mJ Ezpk Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5) 4.5 mJ TJ Junction Temperature 150 °C TA Operating Ambient Temperature −40 to 85 °C Tstg Storage Temperature Range −65 to +150 °C PD Total Power Dissipation (Note 1) SOT−23 Derating Above 25 °C 225 1.8 mW mW/ °C Total Power Dissipation (Note 1) SC−74 Derating Above 25 °C 380 1.5 mW mW/ °C RqJA Thermal Resistance, Junction−to−Ambient SOT−23 SC−74 556 329 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. 2. Refer to the section covering Avalanche and Energy. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS VBRDSS Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA) 6.0 8.0 9.0 V BVGSO Ig = 1.0 mA − − 8.0 V IDSS Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) − − − − 15 15 mA IGSS Gate Body Leakage Current (318) (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) 5.0 − − − 19 50 mA Gate Body Leakage Current (318F) (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) 5.0 − − − 35 65 mA |
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