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MTB013N10RH8 Arkusz danych(PDF) 2 Page - Cystech Electonics Corp.

Numer części MTB013N10RH8
Szczegółowy opis  N-Channel Enhancement Mode Power MOSFET
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Producent  CYSTEKEC [Cystech Electonics Corp.]
Strona internetowa  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB013N10RH8 Arkusz danych(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C056H8
Issued Date : 2016.08.29
Revised Date :
Page No. : 2/10
MTB013N10RH8
CYStek Product Specification
Absolute Maximum Ratings (Ta=25
°C)
Parameter
Symbol
10s
Steady State Unit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TC=25
°C, VGS=10V
(Note 1)
42
Continuous Drain Current @ TC=100
°C, VGS=10V (Note 1)
ID
26.6
Continuous Drain Current @ TA=25
°C, VGS=10V
(Note 2)
14.3
9.5
Continuous Drain Current @ TA=70
°C, VGS=10V
(Note 2)
11.4
7.6
Continuous Drain Current @ TA=85
°C, VGS=10V
(Note 2)
IDSM
10.3
6.9
Pulsed Drain Current
(Note 3)
IDM
168 *1
Avalanche Current @ L=0.1mH
(Note 3)
IAS
42
A
Avalanche Energy @ L=1mH, ID=26A, VDD=50V
(Note 4)
EAS
338
Repetitive Avalanche Energy @ L=0.05mH
(Note 3)
EAR
5 *2
mJ
TC=25℃
(Note 1)
50
TC=100℃
(Note 1)
PD
20
TA=25
°C
(Note 2)
5.7
2.5
TA=70
°C
(Note 2)
4.0
1.8
Total Power Dissipation
TA=85
°C
(Note 2)
PDSM
3.6
1.6
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol
Typical
Maximum
Unit
t≤10s
18
22
Thermal Resistance, Junction-to-ambient
(Note 2)
Steady State
RθJA
42
50
Thermal Resistance, Junction-to-case
RθJC
2.2
2.5
°C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4.100% tested by conditions of L=2mH, IAS=10A, VGS=10V, VDD=25V


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