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LM113 Arkusz danych(PDF) 2 Page - National Semiconductor (TI) |
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LM113 Arkusz danych(HTML) 2 Page - National Semiconductor (TI) |
2 / 4 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications (Note 3) Power Dissipation (Note 1) 100 mW Reverse Current 50 mA Forward Current 50 mA Storage Temperature Range b 65 Cto a150 C Lead Temperature (Soldering 10 seconds) 300 C Operating Temperature Range LM113 b 55 Ctoa125 C LM313 0 Cto a70 C Electrical Characteristics (Note 2) Parameter Conditions Min Typ Max Units Reverse Breakdown Voltage LM113LM313 IR e 1mA 1160 1220 1280 V LM113-1 1210 122 1232 V LM113-2 1195 122 1245 V Reverse Breakdown Voltage 05 mA s IR s 20 mA 60 15 mV Change Reverse Dynamic Impedance IR e 1 mA 02 10 X IR e 10 mA 025 08 X Forward Voltage Drop IF e 10 mA 067 10 V RMS Noise Voltage 10 Hz s f s 10 kHz 5 m V IR e 1mA Reverse Breakdown Voltage 05 mA s IR s 10 mA 15 mV Change with Current TMIN s TA s TMAX Breakdown Voltage Temperature 10 mA s IR s 10 mA 001 % C Coefficient TMIN s TA s TMAX Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 CW junction to case or 440 CW junction to ambient Note 2 These specifications apply for TA e 25 C unless stated otherwise At high currents breakdown voltage should be measured with lead lengths less than inch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 01 mF unless isolated by at least a 100X resistor as it may oscillate at some currents Note 3 Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for LM113-2 or RETS113X for LM113 Typical Performance Characteristics Temperature Drift Reverse Dynamic Impedance Reverse Characteristics TLH5713 – 3 2 |
Podobny numer części - LM113 |
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Podobny opis - LM113 |
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