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SI1013R Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części SI1013R
Szczegółowy opis  P-Channel 1.8-V (G-S) MOSFET
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1013R Arkusz danych(HTML) 1 Page - Vishay Siliconix

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Si1013R/X
Vishay Siliconix
New Product
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
www.vishay.com
1
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (mA)
1.2 @ VGS = –4.5 V
–350
–20
1.6 @ VGS = –2.5 V
–300
2.7 @ VGS = –1.8 V
–150
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
Top View
2
1
S
D
G
3
Ordering Information:
SC-75A (SOT– 416):
Si1013R–Marking Code : D
SC-89 (SOT– 490):
Si1013X–Marking Code: B
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"6
V
_
TA = 25_C
–400
–350
Continuous Drain Current (TJ = 150_C)b
TA = 85_C
ID
–300
–275
Pulsed Drain Currenta
IDM
–1000
mA
Continuous Source Current (diode conduction)b
IS
–275
–250
TA = 25_C
175
150
Maximum Power Dissipationb for SC-75
TA = 85_C
90
80
TA = 25_C
PD
275
250
mW
Maximum Power Dissipationb for SC-89
TA = 85_C
160
140
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board.


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