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SI1032R Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI1032R Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si1032R/X Vishay Siliconix Document Number: 71172 S-40574—Rev. C, 29-Mar-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 04 8 12 16 20 0.60 0.80 1.00 1.20 1.40 1.60 −50 −25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 0 50 100 150 200 250 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VGS = 0 V f = 1 MHz ID − Drain Current (mA) VGS = 4.5 V ID = 200 mA VGS = 1.8 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0 10 20 30 40 50 0 123 456 ID = 175 mA 1000 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 4.5 V ID = 200 mA VGS = 2.5 V VGS = 1.8 V ID = 175 mA TJ = 125_C TJ = 25_C TJ = 50_C 10 100 VDS = 10 V ID = 150 mA |
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