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KTD2060 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KTD2060 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor KTD2060 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) · Collector Power Dissipation- : PC= 25W@ TC= 25℃ · Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) · Complement to Type KTB1368 APPLICATIONS · Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 0.4 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Podobny numer części - KTD2060 |
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Podobny opis - KTD2060 |
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