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BDY96D Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY96D Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BDY96D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A 1.6 V ICBO Collector Cutoff Current VCB= 750V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 5V 15 60 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V, f= 1.0MHz 10 MHz |
Podobny numer części - BDY96D |
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Podobny opis - BDY96D |
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