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ADPD2212 Arkusz danych(PDF) 4 Page - Analog Devices |
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ADPD2212 Arkusz danych(HTML) 4 Page - Analog Devices |
4 / 14 page Data Sheet ADPD2212 Rev. 0 | Page 3 of 13 SPECIFICATIONS VCC = 3.3 V, TA = 25°C, λ = 528 nm, unless otherwise noted. IPD is the photodiode current, IMOD is the modulation current, EE is irradiance, IOUT is output current, VBIAS is the bias voltage, RFEEDBACK is the TIA feedback resistor, and RLOAD is the load resistance. Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit GAIN Gain (Current Amplifier) β TLA 24 DYNAMIC PERFORMANCE Frequency Response Peaking <6 dB Rise Time t R 10% to 90% full scale (FS) (I OUT = 24 µA) 1.24 µs Fall Time t F 90% to 10% FS (I OUT =24 µA) 1.27 µs Bandwidth BW I PD = 10 nA, IMOD = 1 nA 400 kHz OPTICAL PERFORMANCE Diode Active Area 2.5 mm2 Saturation Irradiance 1600 µW/cm2 NOISE PERFORMANCE Current Noise, Output Referred1 E E = 0 µW/cm 2 1920 fA/√Hz I PD = 10 nA to 300 nA 1.4 × N SHOT fA/√Hz I PD > 300 nA 1.15 × N SHOT fA/√Hz Current Noise Floor, Input Referred E E = 0 µW/cm 2, at 1 kHz 90 150 fA/√Hz Noise Equivalent Power NEP At 1 kHz 100 fW/√Hz E E Required for SNR = 10000:1 At 1 kHz 144 nW/cm2 POWER AND SUPPLY Supply Voltage V CC 1.8 3.3 5.0 V Power Supply Rejection Ratio PSRR V CC = 1.8 V to 5.0 V, EE = 1600 µW/cm 2 120 nA/V Current Standby I STANDBY PWDN > V IH 1 µA Supply at E E = 0 µW/cm 2 I FLOOR 137 µA Supply2 I SUPPLY I OUT = 10 µA 166 µA I OUT = 240 µA 857 µA OUTPUT CHARACTERISTICS Amplifier Static Bias Current Input Referred E E = 0 µW/cm 2 10 nA Output Referred E E = 0 µW/cm 2 240 nA Maximum Output Voltage V OUT_MAX V CC − 0.75 V Nominal Linear Output Current I OUT_FS 240 µA Linearity into TIA V BIAS = 1.3 V, RFEEDBACK = 25 kΩ 60 dB Linearity into Resistive Load I OUT < 100 µA , RLOAD = 5 kΩ 60 dB Peak Output Current3 300 µA Output Capacitance C OUT From OUT to GND 5 pF Output Resistance R OUT From OUT to GND 1000 MΩ POWER-DOWN LOGIC Input Voltage High Level V IH V CC − 0.2 V Low Level V IL 0.2 V Leakage Current High I IH PWDN = 3.3 V 0.2 nA Low I IL PWDN = 0 V −8.5 µA OPERATING AMBIENT TEMPERATURE RANGE −40 +85 °C 1 N SHOT refers to photon shot noise. Photon shot noise is the fundamental noise floor for all photodetectors in photoconductive mode. 2 I SUPPLY = IFLOOR + (3 × IOUT). 3 Outputs greater than I OUT_FS may have degraded performance. |
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