Zakładka z wyszukiwarką danych komponentów |
|
STP120NF10 Arkusz danych(PDF) 3 Page - STMicroelectronics |
|
STP120NF10 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STB120NF10 STP120NF10 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V ID = 60 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 25 90 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=80 V ID=120 A VGS=10 V 172 32 64 233 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 60 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 132 68 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 120 480 A A VSD (*) Forward On Voltage ISD = 120 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A di/dt = 100A/µs VDD = 40 V Tj = 150°C (see test circuit, Figure 5) 152 760 10 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
Podobny numer części - STP120NF10 |
|
Podobny opis - STP120NF10 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |