STP120NF10 datasheet(3/10 Pages) STMICROELECTRONICS

Numer części	STP120NF10

Szczegółowy opis	N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET

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STB120NF10 STP120NF10

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 50 V

ID = 60 A

RG = 4.7 Ω

VGS = 10 V

(Resistive Load, Figure 3)

25

90

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=80 V ID=120 A VGS=10 V

172

32

64

233

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 50 V

ID = 60 A

RG = 4.7Ω,

VGS = 10 V

(Resistive Load, Figure 3)

132

68

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

120

480

A

VSD (*)

Forward On Voltage

ISD = 120 A

VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 120 A

di/dt = 100A/µs

VDD = 40 V

Tj = 150°C

(see test circuit, Figure 5)

152

760

10

ns

nC

A

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

Thermal Impedance

Podobny numer części - STP120NF10

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