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SIZ914DT Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części SIZ914DT
Szczegółowy opis  Dual N-Channel 30 V (D-S) MOSFETs
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
SiZ914DT
Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
TrenchFET® Gen IV Power MOSFETs
100 % Rg and UIS Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
CPU Core Power
Computer/Server Peripherals
Synchronous Buck Converter
POL
Telecom DC/DC
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
g. TC = 25 °C.
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
ID (A)
g
Qg (Typ.)
Channel-1
30
0.00640 at VGS = 10 V
16a
7.2 nC
0.01000 at VGS = 4.5 V
16a
Channel-2
30
0.00137 at VGS = 10 V
40a
30.1 nC
0.00194 at VGS = 4.5 V
40a
Ordering Information:
SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
G2
G1
D1
D1
6
7
8
3
2
1
D1
S1/D2
5 mm
6 mm
D1
4
5
Pin 1
PowerPAIR® 6 x 5
Pin 9
D1
S2
N-Channel 2
MOSFET
G1
S1/D2
G2
Schottky
Diode
N-Channel 1
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
+ 20, - 16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
16a
40a
A
TC = 70 °C
16a
40a
TA = 25 °C
16a, b, c
40a, b, c
TA = 70 °C
15.5b, c
38.8b, c
Pulsed Drain Current (t = 100 µs)
IDM
80
100
Continuous Source Drain Diode Current
TC = 25 °C
IS
19
28
TA = 25 °C
3.25b, c
4.3b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
10
20
Single Pulse Avalanche Energy
EAS
520
mJ
Maximum Power Dissipation
TC = 25 °C
PD
22.7
100
W
TC = 70 °C
14.5
64
TA = 25 °C
3.9b, c
5.2b, c
TA = 70 °C
2.5b, c
3.3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Channel-2
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
 10 s
RthJA
25
32
19
24
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4.4
5.5
1
1.25


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