Zakładka z wyszukiwarką danych komponentów |
|
TP0610K Arkusz danych(PDF) 4 Page - Vishay Siliconix |
|
TP0610K Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 4 page TP0610K Vishay Siliconix New Product www.vishay.com 11-4 Document Number: 71411 S-04279—Rev. C, 16-Jul-01 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 2 4 6 8 10 02468 10 On-Resistance vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 125_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) 10 TJ = –55_C VGS = 0 V Threshold Voltage Variance Over Temperature –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 –50 –25 0 25 50 75 100 125 150 ID = 250 mA TJ – Junction Temperature (_C) 10–3 10–2 1 10 600 10–1 10–4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.01 0 1 2.5 3 100 600 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) 1.5 2 0.5 1 10 TA = 25_C For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. |
Podobny numer części - TP0610K |
|
Podobny opis - TP0610K |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |