6N70 datasheet(2/8 Pages) DYELEC

Numer części	6N70

Szczegółowy opis	700V N-Channel Power MOSFET

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THERMAL DATA

6N70

700V N-Channel Power MOSFET

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220

/TO-262/TO-263

ITO-220

θJA

62.5

120

°C/W

Junction to Case

TO-220

/TO-262/TO-263

θJC

0.78

°C/W

ITO-220

2.78

May.2015-REV.00

www.dyelec.com

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,ID=250uA

700

-

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

2

2.8

4

V

Drain-Source On-State Resistance

RDS(on)

VGS=10V,ID=3A

-

1.47

1.7

Ω

Zero Gate Voltage Drain Current

IDSS

VDS=700V,VGS=0V

-

0.03

1.0

uA

Gate-Source Leakage Current

IGSS

VGS=+30V,VDS=0V

-

+10

+100

nA

Diode Forward Voltage

VSD

IS=6A,VGS=0V

-

0.87

1.4

V

Dynamic (Note 4)

Total Gate Charge

Qg

VDS=560V, ID=6A,

VGS=10V (Note 2,3)

-

16.5

-

nC

Gate-Source Charge

Qgs

-

4.8

-

Gate-Drain Charge

Qgd

-

5.7

-

Input Capacitance

Ciss

VDS=25V, VGS=0V,

f=1.0MHZ

-

831

-

pF

Output Capacitance

Coss

-

92

-

Reverse Transfer Capacitance

Crss

-

0.8

-

Turn-On Delay Time

td(on)

VDD=350V, ID=6A,

RG=25Ω (Note 2,3)

-

25

-

ns

Turn-On Rise Time

tr

-

38

-

Turn-Off Delay Time

td(off)

-

49

-

Turn-Off Fall Time

tf

-

30

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

IS

---

-

6

A

Maximum Pulsed Drain-Source

Diode Forward Current

ISM

---

-

24

A

Reverse Recovery Time

trr

VGS=0V, IS=6A

dIF/ dt=100A/us (Note 2)

-

531

-

ns

Reverse Recovery Charge

Qrr

-

3.3

-

uC

Podobny numer części - 6N70

Producent	Numer części	Arkusz danych	Szczegółowy opis
Unisonic Technologies	6N70	174Kb / 6P	6.0A, 700V N-CHANNEL POWER MOSFET
Inchange Semiconductor ...	6N70	58Kb / 2P	Simple Drive Requirements
SUNMATE electronic Co.,...	6N70	1Mb / 6P	N-CHANNEL POWER MOSFET
Unisonic Technologies	6N70-C	200Kb / 6P	N-CHANNEL POWER MOSFET
Unisonic Technologies	6N70-P	352Kb / 8P	N-CHANNEL POWER MOSFET

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Podobny opis - 6N70

Producent	Numer części	Arkusz danych	Szczegółowy opis
DIYI Electronic Technol...	7N70	2Mb / 7P	700V N-Channel Power MOSFET
Taiwan Semiconductor Co...	TSM2N70	442Kb / 10P	700V N-Channel Power MOSFET
Taiwan Semiconductor Co...	TSM8N70	476Kb / 8P	700V N-Channel Power MOSFET
DIYI Electronic Technol...	7N70L	2Mb / 6P	700V N-Channel Power MOSFET
Taiwan Semiconductor Co...	TSM8N70	3Mb / 8P	700V N-Channel Power MOSFET
Taiwan Semiconductor Co...	TSM2N70	211Kb / 7P	700V N-Channel Power MOSFET
Unisonic Technologies	10N70Z	209Kb / 6P	10A, 700V N-CHANNEL POWER MOSFET
	5N70K	211Kb / 6P	5A, 700V N-CHANNEL POWER MOSFET
	4N70K	250Kb / 6P	4.4A, 700V N-CHANNEL POWER MOSFET
Nanjing International G...	NJ12N70	1,009Kb / 9P	12A 700V N-CHANNEL POWER MOSFET

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