BC546A datasheet(2/4 Pages) SUNMATE

Numer części	BC546A

Szczegółowy opis	NPN SILICON AMPLIFIER TRANSISTOR

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ON CHARACTERISTICS

DC Current Gain

(IC = 10 µA, VCE = 5.0 V)

BC546A/547A/548A

BC546B/547B/548B

BC546C/547C/548C

(IC = 2.0 mA, VCE = 5.0 V)

BC546A/547A/548A

BC546B/547B/548B

BC546C/547C/548C

(IC = 100 mA, VCE = 5.0 V)

BC546A/547A/548A

BC546B/547B/548B

BC546C/547C/548C

hFE

—

110

200

420

—

90

150

270

180

290

520

120

180

300

—

220

450

800

—

Collector–Emitter Saturation Voltage

(IC = 100 mA, IB = 5.0 mA)

VCE(sat)

—

---

0.3

V

Base–Emitter Saturation Voltage

(IC = 100 mA, IB = 5.0 mA)

VBE(sat)

—

1.0

—

V

Base–Emitter On Voltage

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 10 mA, VCE = 5.0 V)

VBE(on)

0.55

—

0.7

0.77

V

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

BC546

BC547

BC548

fT

150

300

—

MHz

Output Capacitance

(VCB = 10 V, IC = 0, f = 1.0 MHz)

Cobo

—

1.7

4.5

pF

Input Capacitance

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

Cibo

—

10

—

pF

Small–Signal Current Gain

(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

BC546A/547A/548A

BC546B/547B/548B

BC546C/547C/548C

hfe

125

240

450

220

330

600

260

500

900

—

Noise Figure

(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,

BC546

f = 1.0 kHz,

∆f = 200 Hz)

BC547

BC548

NF

—

2.0

10

dB

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

BC546

(IC = 1.0 mA, IB = 0)

BC547

BC548

V(BR)CEO

65

45

30

—

V

Collector–Base Breakdown Voltage

BC546

(IC = 100 µAdc)

BC547

BC548

V(BR)CBO

80

50

30

—

V

Emitter–Base Breakdown Voltage

BC546

(IE = 10 mA, IC = 0)

BC547

BC548

V(BR)EBO

6.0

—

V

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